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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N04M1618L1A
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx16 bit Overview
The N04M1618L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N04M1618L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package
Features
* Dual Power Supply for lowest power 1.4 to 2.3 Volts - VCC 1.4 to 3.6 Volts - VCCQ * Very low standby current 400nA at 2.0V and 37 deg C Maximum * Very low operating current 0.7mA at 1.8V and 1s (Typical) * Low Page Mode operating current 0.5mA at 1.8V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Low voltage data retention Vcc = 1.2V * Automatic power down to standby mode * Special Processing to reduce Soft Error Rate (SER) * Space saving BGA package available
Product Family
Part Number N04M1618L1AB N04M1618L1AT Package Type 48 - BGA 44 - TSOP II -40oC to +85oC 1.4V - 2.3V 85ns @ 1.7V 1.4V - 3.6V 150ns @ 1.4V 10 A 3 mA @ 1MHz Operating Temperature Power Supply (Vcc)/(VccQ) Speed Standby Operating Current (ISB), Current (Icc), Max Max
N04M1618L1AD Known Good Die
Pin Configuration
A4 A3 A2 A1 A0 CE1# I/O0 I/O1 I/O2 I/O3 VCC VSS I/O15 I/O14 I/O13 I/O12 WE# A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE# UB# LB# I/O4 I/O5 I/O6 I/O7 VSS VCCQ I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17
Pin Descriptions
1 A B C D E F G H
LB# I/O8 I/O9 VSS VCC
2
OE# UB# I/O10 I/O11 I/O12
3
A0 A3 A5 A17 NC A14 A12 A9
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2 CE1# I/O1 I/O3 I/O4 I/O5 WE# A11
6
CE2 I/O0 I/O2 VCCQ VSS I/O6 I/O7 NC
Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VCCQ VSS NC
Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Input/Output Power Ground Not Connected
N04M1618L2AT TSOP
I/O14 I/O13 I/O15 NC NC A8
48 Pin BGA (top) 6 x 8 mm
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Functional Block Diagram
N04M1618L1A
Address Inputs A0 - A17
Address Decode Logic
256K x 16 Memory Array
Input/ Output Mux and Buffers
I/O0 - I/O7
I/O8 - I/O15
CE1 WE OE UB LB
Control Logic
Functional Description
CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER
N04M1618L1A
Rating -0.3 to VCC+0.3 -0.3 to 4.5 500 -40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW
o
C
oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Core Supply Voltage I/O Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 s Cycle Time2 Read/Write Operating Supply Current @ 85 ns Cycle Time2 Page Mode Operating Supply Current @ 85 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Read/Write Quiescent Operating Supply Current3 Symbol VCC VCCQ VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = 0.2mA IOL = -0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.5 10.0 VCCQ > or = VCC Chip Disabled3 Test Conditions Min. 1.4 1.4 1.2 VCCQ-0.6 -0.3 VCCQ-0.2 0.2 0.1 0.1 2.5 13.0 VCCQ+0.3 0.6 Typ1 1.8 1.8 Max 2.3 3.6 Unit V V V V V V V A A mA mA
ICC3
3.5
mA
ICC4
0.2
A
Standby
Current3
ISB1
0.2
20.0
A
Data Retention Current3
IDR
0.1
1.0
A
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH)
N04M1618L1A
Page Address (A4 - A17)
Open page ...
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1 CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs.
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature
N04M1618L1A
0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF -40 to +85 oC
Timing VCCQ > or = VCC
Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tWP tAS tWR tWHZ tDW tDH tOW 50 0 10 20 20 0 0 20 150 75 75 50 0 0 30 40 0 5 30 30 VCC = 1.4 - 2.3 V Min. 150 150 150 50 10 5 0 0 10 85 50 50 40 0 0 15 15 15 Max. VCC = 1.7 - 2.3 V Min. 85 85 85 40 Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N04M1618L1A
tRC
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
Address tAA tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA
tHZ(1,2)
CE1# tCO CE2 tLZ(2) tOE OE# tOLZ tLB, tUB LB#, UB# tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid tOHZ(1)
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1# tCW CE2 tLBW, tUBW LB#, UB# tAS WE# tDW High-Z Data In tWHZ Data Out tWP
N04M1618L1A
tWR
tDH
Data Valid tOW High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1# (for CE2 Control, use inverted signal) LB#, UB# tWP WE# tDW Data In tLZ Data Out tWHZ tDH tCW tAS tLBW, tUBW tWR
Data Valid
High-Z
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Ball Grid Array Package
BOTTOM VIEW 6 mm
N04M1618L1A
0.75 mm 8 mm
0.75 mm
32-Lead STSOP-I Package (N32)44-Lead TSOP II Package (T44)
18.41mm
10.16mm
0.80mm REF
Ordering Information
N04M1618L1AX-XX X
Temperature
I = Industrial, -40C to 85C
Performance
85 = 85ns @ 1.7V
Package Type
T = 44-pin TSOP II B = 48-ball BGA D = Known Good Die
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N04M1618L1A
Change Description Initial Release
Revision History
Revision # 01 Date 11/01/02
(c) 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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